| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a display device in which the utilization efficiency of a material is improved, the deviation of a threshold value hardly occurs with small number of photomasks and which has a TFT performing a high speed operation. <P>SOLUTION: One of the display devices includes a gate electrode layer and a pixel electrode layer provided on the surface of an insulator, a gate insulating layer on the gate electrode layer, a crystalline semiconductor layer on the gate insulating layer, one conductivity type semiconductor layer in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer in contact with the semiconductor layer having one conduction property, and an insulating layer on the drain electrode layer and the pixel electrode layer. The insulating layer has a first aperture which reaches the source electrode layer or the drain electrode layer. The gate insulating layer and the insulating layer have a second aperture which reaches the pixel electrode layer. The first aperture and the second aperture have an interconnect line layer for electrically connecting the source electrode layer or the drain electrode layer to the pixel electrode layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
