| 摘要 |
PROBLEM TO BE SOLVED: To provide a complementary metal oxide semiconductor image sensor that can prevent the photoresponse from lowering because of its low temperature insulating protection film for protecting micro lens. SOLUTION: This image sensor comprises a light-sensitive element 31, a micro lens 41 formed on the light-sensitive element 41, an insulating protection film 45 formed on the micro lens 41 for protecting micro lens and an oxide film 42A formed between the micro lens 41 and the insulating protection film 45 with an index of refraction smaller than that of the micro lens 41. COPYRIGHT: (C)2006,JPO&NCIPI
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