PLASMA PROCESSING METHOD FOR MANUFACTURE OF SEMICONDUCTOR INTEGRATED DEVICE

摘要

PROBLEM TO BE SOLVED: To increase a production yield by reducing the amount of foreign matter as the cause of fault generation without deteriorating other processing characteristics upon processing a semiconductor device. SOLUTION: A ratio between a voltage applied to an electrode 103 having a wafer 104 mounted thereon and a voltage applied to a conductor ring member 122 mounted in the periphery of the electrode is adjusted so that the voltage applied to the conductor ring member 122 becomes small prior to plasma stoppage. As a result, floating particles residing at the boundary of a plasma sheath are moved onto the conductor ring 122. COPYRIGHT: (C)2006,JPO&NCIPI