SELF-OSCILLATION SEMICONDUCTOR LASER, ITS FABRICATION PROCESS, PHOTOSENSOR, OPTICAL TRANSMISSION SYSTEM AND RECORDER/REPRODUCER

摘要

PROBLEM TO BE SOLVED: To provide a self-oscillation semiconductor laser employing a mixed-crystal semiconductor containing nitrogen and a group V element other than nitrogen as an active layer and oscillating stably. SOLUTION: The self-oscillation semiconductor laser comprising a substrate, an active layer composed of a mixed-crystal semiconductor of nitrogen and a group V element other than nitrogen, and a conducive layer including a clad layer provided above and below the active layer is further provided with a saturable absorption layer having band gap energy substantially equal to that of the active layer and composed of a mixed-crystal semiconductor of nitrogen and a group V element other than nitrogen wherein the saturable absorption layer contains Al. COPYRIGHT: (C)2006,JPO&NCIPI