| 摘要 |
PROBLEM TO BE SOLVED: To provide the reliability deciding method of capacitor capable of highly accurately deciding the reliability of the capacitor formed on a semiconductor substrate, while considering the film thickness fluctuation of a dielectric film on the peripheral part of the capacitor, which is generated upon forming the capacitor on the semiconductor substrate. SOLUTION: An allowable area Sp on the life of the capacitor formed on the semiconductor substrate is obtained (S1-1). The life ratio 1/r of the periphery of the capacitor formed on the semiconductor substrate to the central part of the same is obtained from the film thickness of periphery of the capacitor formed on a trial product (S1-2). The total area A of the central part of the whole capacitor formed on the semiconductor substrate and the total area B of the periphery of the same are obtained (S1-3). A, B are decided whether they satisfy a reliability deciding formula (A+B×r≤Sp) or not (S1-4). When the formula is satisfied, the capacitor formed on the semiconductor substrate in accordance with the design of a layout is decided that the same is reliable, however, when the formula is not satisfied, the capacitor is decided that the same is not reliable. COPYRIGHT: (C)2006,JPO&NCIPI
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