| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of processes of photolithography by forming a source/drain electrode, an ohmic contact layer, and a semiconductor thin film with a one time photolithography process. SOLUTION: A semiconductor thin film forming film 41 is formed on the upper surface of a gate insulating film 4, and a channel protective film 6 is formed on the upper surface of the semiconductor thin film forming film 41; an ohmic contact layer forming film 43 and a source/drain electrode forming film 44 are formed on the upper surface of the semiconductor thin film forming film 41 including the channel protective film 6; and a source/drain electrode forming resist film 45a, 45b are formed on the upper surface of the source/drain electrode forming film 44 with a photolithography method. Additionally, the source/drain electrode forming film 44, the ohmic contact layer forming film 43, and the semiconductor thin film forming film 41 are sequentially etched using the source/drain electrode forming resist films 45a, 45b (including the channel protective film 6) as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
|
