| 摘要 |
PROBLEM TO BE SOLVED: To provide a testing method for a static random access memory (SRAM), for measuring the electrical characteristics of individual transistor in a cell, without destroying operation-faulty memory cells. SOLUTION: In the testing method of SRAM of this invention, a circuit is provided for switching each control circuit of wordline of selected memory cells, bit line, ground line and power line to corresponding external control circuit. By sending a testing current either the load device or the drive device inside the memory cells via a transfer gate, the electrical characteristics of individual devices is measured. COPYRIGHT: (C)2006,JPO&NCIPI
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