| 摘要 |
According to the invention, etching is performed in a reaction chamber ( 1 ) by subjecting a substrate ( 16 ) biased by a bias generator ( 15 ) to a plasma generated by a plasma source ( 4 ) contained in a leakproof wall ( 5 ) of dielectric material surrounded by an inductive coupled antenna ( 6 ) powered by a radiofrequency generator ( 7 ). Control means ( 13 ) control solenoid valves ( 12 a, 12 b, 12 c) and the radiofrequency generator ( 7 ) so as to produce a prior step of establishing the plasma excitation power progressively, during which step an inert gas such as argon or nitrogen is injected into the reaction chamber ( 1 ), and the power delivered by the radiofrequency generator ( 7 ) is raised progressively until it reaches a nominal power. This avoids applying thermal shock to the leakproof wall ( 5 ) of dielectric material that might otherwise destroy the wall, thus making it possible to plasma excitation powers that are greater than 3000 W.
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