| 摘要 |
<p>In a plasma processing apparatus (100), an upper side plate (60) and a lower side plate (61) are provided on an upper part of a susceptor (2). The upper side plate (60) and the lower side plate (61) are composed of a heat resistant insulator, such as quartz, are separately arranged in parallel, for instance, at an interval of 5mm, and are provided with a plurality of through holes (60a or 61a). The through holes are formed at different positions so that the through holes (61a) of the lower side plate (61) and the through holes (60a) of the uppers side plate (60) do not overlap one another when the two plates are placed one over another.</p> |
