| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device where a high speed operation is realized while noise resistance is secured. <P>SOLUTION: The device is provided with a first region formed of a gate electrode region and a first insulating film region surrounding the gate electrode region, a semiconductor region which is arranged opposite to the gate electrode region through the first insulating film region, and includes a channel forming region; and a second region formed of a conductor region embedded and formed in the semiconductor region which is not the channel forming region in the semiconductor regions arranged opposite to the gate electrode region through the first insulating region, and of a second insulating region detaching the conductor region from the semiconductor region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
