发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A LTPS FILM |
摘要 |
A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.
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申请公布号 |
US2006060848(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050907436 |
申请日期 |
2005.03.31 |
申请人 |
CHANG CHIH-HSIUNG;CHEN YI-WEI;SUN MING-WEI |
发明人 |
CHANG CHIH-HSIUNG;CHEN YI-WEI;SUN MING-WEI |
分类号 |
H01L29/04;H01L21/20;H01L29/786 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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