发明名称 High efficiency group III nitride-silicon carbide light emitting diode
摘要 A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
申请公布号 US2006060877(A1) 申请公布日期 2006.03.23
申请号 US20040951042 申请日期 2004.09.22
申请人 EDMOND JOHN A;BHARATHAN JAYESH;SLATER DAVID B JR 发明人 EDMOND JOHN A.;BHARATHAN JAYESH;SLATER DAVID B.JR.
分类号 H01L33/00;H01L33/36 主分类号 H01L33/00
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