| 摘要 |
In a substrate processing apparatus used for manufacturing a semiconductor substrate, and a method using the same, the apparatus includes a substrate processing apparatus used for manufacturing a semiconductor substrate includes, a reaction chamber in which a thermal processing process is performed, a heater chamber for providing heat required for the process to the reaction chamber, the heater chamber surrounding the reaction chamber, a housing defining a space in which the reaction chamber and the heater chamber are provided, a heat venting unit for venting heat in the housing, and a controller for controlling the heat venting unit to maintain a temperature of an interior of the reaction chamber within a predetermined range of a process temperature by regulating an amount of thermal atmosphere exhausted through the heat venting unit.
|
