| 摘要 |
<p>A plurality of sectors (1a) for forming a flash memory (1) are individually divided into a plurality of blocks (1b), each of which is provided with a data writing area (1c) and a block state management area (1d) formed in the data writing area (1c) and having data written to indicate the data unwritten, being written or written state. From the "written" or "being written" state, it is easily decide whether or not the written data can be relied on, thereby to improve the data writing precision. By the division into the plural blocks (1b), moreover, the data rewriting number per sector (1a) is increased to N times as large as that of the priorart, and the erasing number is decreased to 1/N times, thereby to elongate the lifetime of the flash memory (1).</p> |
