| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize big magnetic reluctance rate of change while consolidating the antiferromagnetism bond of a synthetic pinned layer in a CPP-GMR element using a synthetic pinned layer. <P>SOLUTION: A magnetoresistance effect element comprises a free layer 11 where a magnetizing direction changes to an external magnetic field, an outer pinned layer 7 where the magnetizing direction is fixed to the external magnetic field, a nonmagnetic intermediate layer 8 consisting of a ruthenium of about 0.4 nm of thickness, and an inner pinned layer 9 of 3 nm or more of thickness with layered structure where a magnetizing direction is fixed to an external magnetic field by bonding the outer pinned layer 7 in antiferromagnetism via the nonmagnetic intermediate layer 8. It has a spacer layer 10 inserted between the free layer 11 and the inner pinned layer 9; and sense current flows through each pinned layer, the spacer layer 10, and the free layer 11 according to almost laminated direction. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
