| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an epitaxial wafer and an element whose characteristic is improved. <P>SOLUTION: The epitaxial wafer has a substrate 3, a buffer layer 9, a light receiving layer 11, and window layer 13. The buffer layer 9 is formed on the substrate 3. The light receiving layer 11 is formed on the buffer layer 9. The light receiving layer 11 is composed of an epitaxial film which has a lattice constant larger than the lattice constant of a material constituting the substrate 3. The window layer 13 is formed on the light receiving layer 11 and is composed of one layer or a plurality of layers which are located to be contacted with the light receiving layer 11. The lattice constant of the layer which contacts with the light receiving layer 11 among the layers constituting the window layer 13, is smaller than either lattice constant larger between the lattice constant of the light receiving layer 11 and the lattice constant of the buffer layer 9. The thickness of the window layer 13 is 0.2μm to 2.0μm. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
