CCD IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element which has less crosstalk between adjacent pixels and has less damage to a photodiode during manufacture. SOLUTION: An oxide film on a p+-type diffusion layer to be formed as an element isolation region of a photodiode is removed by etching, the p+-type diffusion layer is connected by contact electrodes to a light-shielding metal film of a peripheral upper layer of the photodiode. Since the oxide film on the p+-type diffusion layer is removed, the oxide film forms a waveguide, and thus a crosstalk causing phenomenon is prevented. Since the contact electrodes are connected to the p+-type diffusion layer in the form of a row, a damage to a part of the photodiode around the p+-type diffusion layer and having an electric charge stored therein is prevented during manufacture. COPYRIGHT: (C)2006,JPO&NCIPI