| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput by shortening a heat treating time duration. SOLUTION: In a low-temperature annealing device 10 having a process tube 31 made of a silicon carbide in which the processing chamber 32 of a wafer 1 is formed and a heater unit 60 for heating the wafer 1 of the processing chamber 32 to a relatively low temperature of 150°C to 600°C, the heating element 63 of the heater unit 60 is brought into contact with the external surface of a processing tube 31 through an insulating layer 64 made of alumina. In the case of annealing, the processing chamber 32 is made into a hydrogen gas atmosphere. Since the process tube can be heated by heat conduction, a heat transfer speed between the heater unit and the process tube can be improved. The hydrogen gas atmosphere where thermal conductivity is large is provided. Thereby, the heat of the process tube heated by the heater unit can be transferred by the heat conduction. Since the temperature rising of the wafer 1 can be performed in a short time, the throughput of the low-temperature annealing device can be improved. COPYRIGHT: (C)2006,JPO&NCIPI
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