| 摘要 |
A field effect transistor according to one embodiment of the present invention is a field effect transistor which is supposed to be operated under a temperature condition at 300 K or less, comprising: an n-channel field effect transistor having a gate electrode formed by a gate electrode material having a work function WFn of less than 4.05. A field effect transistor according to one embodiment of the present invention is a field effect transistor which is supposed to be operated under a temperature condition at 300 K or less, comprising: a p-channel field effect transistor having a gate electrode formed by a gate electrode material having a work function WFp of more than 5.17.
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