Radiation-emitting optoelectronic component with a quantum well structure and method for producing it

摘要

A radiation-emitting optoelectronic component with an active zone having a quantum well structure ( 5 ) containing at least one first nitride compound semiconductor material. The quantum well structure ( 5 ) is grown on at least one side facet ( 9 ) of a nonplanar structure ( 4 ) containing at least one second nitride compound semiconductor material. As a result of the quantum well structure ( 5 ) being grown onto a side facet ( 9 ), piezoelectric fields caused by lattice mismatches are advantageously reduced and the homogeneity of the quantum well structure ( 5 ) is improved.