发明名称 Process gas introducing mechanism and plasma processing device
摘要 A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.
申请公布号 US2006060141(A1) 申请公布日期 2006.03.23
申请号 US20050264309 申请日期 2005.11.02
申请人 TOKYO ELECTRON LIMITED 发明人 KAMAISHI TAKAYUKI;SHIMAMURA AKINORI;MORISHIMA MASATO
分类号 H01L21/306;C23C16/00;H01J37/32;H01L21/00;H01L21/3065 主分类号 H01L21/306
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