发明名称 |
METHOD FOR MAKING THIN FILM TRANSISTORS WITH LIGHTLY DOPED REGIONS |
摘要 |
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.
|
申请公布号 |
US2006063343(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20040947210 |
申请日期 |
2004.09.23 |
申请人 |
CHANG SHIH-CHANG;DENG DE-HUA;TSAI YAW-MING |
发明人 |
CHANG SHIH-CHANG;DENG DE-HUA;TSAI YAW-MING |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|