SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER ELEMENT ARRAY

摘要

A semiconductor laser element (3) is provided with an n-type clad layer (13), an active layer (15), and a p-type clad layer (17). The p-type clad layer (17) is provided with a ridge part (9) which forms a waveguide (4) on the active layer (15). The waveguide (4) extends along a center axis line (B) which curves at a substantially constant curvature (curvature radius (R)). In such waveguide (4), among light which resonates in the waveguide (4), light having a higher order spatial transverse mode has a larger loss. Therefore, while maintaining laser oscillation in a low order transverse mode, laser oscillation in a high order transverse mode can be suppressed. Thus, the semiconductor laser element and a semiconductor laser element array which can project a laser beam having a relatively high intensity and suppress the high order transverse mode are provided.