COATING METHOD AND COATING DEVICE

摘要

It is possible to perform a series of resist coating processing from a resist liquid application to removal of the resist film from the peripheral portion of a wafer in a short time. A laser irradiation unit for irradiating a laser beam is arranged on a resist coating device. During a resist coating process, a resist liquid is discharged from a resist liquid supply nozzle to the center portion of a rotating wafer so as to form a resist film on the wafer. After this, the laser irradiation unit is moved to a space above a peripheral portion of the wafer so that the laser beam is applied to the resist film on the peripheral portion so as to dry the resist film on the peripheral portion. When the resist film on the peripheral portion is dried, irradiation of the laser beam is continued and a solvent supply nozzle moves to a space above the peripheral portion so that the solvent is supplied onto the resist film on the peripheral portion of the wafer. By this solvent supplied, the resist film on the peripheral portion of the wafer is solved and removed.