| 摘要 |
<p>In an MRAM of the invention, a bit line (202) has a bent portion (206) similarly formed. The bent portion (206) is bent centering a TMR element (203), in this case, into a generally U shape (in the example shown in the drawing, generally inverted-U shape). The bit line (202) having the bent portion (206) surrounds the TMR element (203) inside the space defined by the bent portion (206). With this relatively simple constitution, a highly reliable MRAM realizing considerable power saving in data writing into a memory cell is realized which satisfying the requirement of further microminiaturization of the device.</p> |
