| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method of etching a nitride semiconductor which is excellent in controllability, stability and accuracy, and capable of carrying out etching at a high aspect ratio, and to provide a method of manufacturing a semiconductor device by the use of the same. <P>SOLUTION: The p-type GaN layer 103 of a nitride semiconductor layer is dipped into an electrolyte 110, and undergoes an etching treatment as a bias voltage is applied to it by the use of a bias source 108 while the irradiation of the p-type GaN layer 103 with ultraviolet rays is suppressed by an ultraviolet preventing film 112 or the like. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
