| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve information holding without refresh, stable reading operation and low standby power requirement in a semiconductor device using a memory cell consisting of four transistors. <P>SOLUTION: Capacitors C1 and C2 are provided to the storage nodes N1 and N2 of a memory cell MC to carry out rewriting after destructive read in the case of information reading and to hold the potential of the storage nodes N1 and N2 by leakage current flowing through transistors MP1 and MP2 by keeping bit lines BL and /BL to have a fixed potential in the case of information holding. In the case, impedance in the off state of transistors MN1 and MN2 is designated to be larger than the impedance in the off state of transistors MP1 and MP2. Moreover, by using a TFT transistor whose channel part is about 5 nm, the leakage current is reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
