| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid memory device which has a simple structure, and is capable of achieving further densification, higher accessibility, and longer stability in recording while suppressing power consumption substantially. SOLUTION: The solid memory device comprises magnetization fixing layers 101, 109 which are composed of a permanent magnet, or an antiferromagnetic material for fixing the direction of magnetization of high-spin polarized layers 102, 104, 106, 108. The polarized layers consist of magnetic layers showing a high spin polarity. The memory also includes insulating layers 103, 107 which exert a tunnel magnetic resistance effect to contribute to memory read-out, and emit Joule's heat as a writing current passes through the insulating layers 103, 107 to heat a writing layer 105. The writing layer 105 is of a magnetization reversing layer whose direction of magnetization reverses in response to a spin carrier injection from the high-spin polarized layers 102, 104, 106, 108. The writing layer 105 shows a low Curie temperature (150 to 300°C), and is capable of magnetization reversal with fewer spin injection when subjected to heat. COPYRIGHT: (C)2006,JPO&NCIPI
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