SOI SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an SOI substrate manufacturing method and an SOI substrate for efficiently manufacturing a stable SIMOX substrate having an excellent gettering ability. SOLUTION: In the SOI substrate manufacturing method, oxygen ions are so injected into a monocrystal silicon substrate at least from its one principal surface as to form an oxygen-ion injecting layer. Thereafter, to the monocrystal silicon substrate, there is performed an oxide-film forming heat treatment for changing the formed oxygen-ion injecting layer to a buried insulating layer. In this case, the oxide-film forming heat treatment is performed under the condition of a high oxygen partial pressure not smaller than at least 5%, and there is performed an oxygen-deposit forming heat treatment for forming oxygen deposits in the monocrystal silicon substrate at least after the temperature of the oxide-film forming heat treatment passes its maximum value. The SOI substrate is manufactured in this way, and the concentration of the oxygen deposits having a gettering ability which are contained in the monocrystal silicon substrate is not smaller than 5×108/cm3. COPYRIGHT: (C)2006,JPO&NCIPI