| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory where high reliability is obtained without increasing the area of a capacitor, and to provide a manufacturing method thereof. SOLUTION: An interlayer insulation film 4 is formed on a semiconductor substrate 1 where a transistor 2 for selecting a storage element is formed, and a contact hole is formed at the interlayer insulation film 4 by a plasma etching method with a gas system containing CHF<SB>3</SB>as an etching gas. Thus, the contact hole is obtained where the side of a ferroelectric capacitor 10 is formed to be wide, and the side of the diffusion layer 2a of the transistor 2 is formed to be narrow. When charging the contact hole with electrically conductive material such as tungsten, material gas is supplied without irregularity in the contact hole, so that a gap called a seam is generated at the center. Thus, the surface of a cell plug 20 is finished uniformly and flatly, and the ferroelectric capacitor 10 of good characteristic can be formed on the cell plug 20. COPYRIGHT: (C)2006,JPO&NCIPI
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