| 摘要 |
PROBLEM TO BE SOLVED: To have a void-free structure in each of embedded device separation areas having different depth and different wideness. SOLUTION: The semiconductor device comprises a memory cell area including a first device separation area 20, and a second device formation area including a second device separation area 21b of which a frontage is wider than that of the first device separation area 20, and in which a central portion 21a is deeper than a periphery and the first device separation area 20. COPYRIGHT: (C)2006,JPO&NCIPI
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