| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing apparatus which can suppress the variation of temperatures of wafers when it processes the wafers successively. SOLUTION: On the ceramic plate 15 of a wafer stage 2 in a vacuum chamber 9, the wafers 1 are placed one by one. During this operation, the temperature of the wafer 1 is controlled by adjusting the pressure of a thermally conductive gas introduced between the wafer 1 and the ceramic plate 15. When processing the wafer 1 by plasmas 6, the operator can select any combination of processes from among a process of adjusting the pressure of the thermally conductive gas for each wafer, a process by optimization of aging conditions, and a process by optimization of heater conditions as a way of reducing the variation of temperatures of the wafers within a lot. After selecting the process(es), the processing conditions are calculated for the selected process(es) by a control computer of the processing apparatus, and then the wafer is processed based on the calculated processing conditions. Since the variation of temperatures of wafers within a lot can be reduced by an easy operation, plasma processing can be done with good reproducibility even for a process which is largely influenced by temperature. COPYRIGHT: (C)2006,JPO&NCIPI
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