| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which is capable of improving transistor elements in yield and reliability by suppressing the channeling of impurity ions introduced through an ion implantation method for the formation of source/drain regions, and by improving the symmetry of electrical properties. SOLUTION: A channeling suppressing layer 10 is formed on the surface of a semiconductor substrate where the source/drain regions are provided through an ion implantation method in a first ion implantation process, and then the source/drain regions are formed through a following second ion implantation process. COPYRIGHT: (C)2006,JPO&NCIPI
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