| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of controlling the crystal particle diameter of a polysilicon resistor responding to required characteristics, and to provide a manufacturing method. SOLUTION: The semiconductor device comprises a first polysilicon resistance 3' having the peak in a predetermined crystal grain diameter distribution, and a second polysilicon resistor 3 having a peak in a larger diameter side than the peak of the crystal particle diameter distribution of the first polysilicon resistor, formed respectively in a predetermined region on a semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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