| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein a pretreatment step is provided as pretreatment for forming an insulating film appropriately on a base insulating film so as to obtain sufficient effect for a short time. SOLUTION: When an insulating film is subjected to be formed on the surface of a semiconductor substrate wherein a base insulating film is formed on the entire surface by the CVD method; the surface layer of the base insulating film is etched by a plasma of a fluorine-containing gas, a plasma of a nitrogen gas or an ammonia gas is given thereto, and then the insulating film is formed by the CVD method. COPYRIGHT: (C)2006,JPO&NCIPI
|
