| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid phase growing apparatus capable of manufacturing a light emitting diode with less occurrence rate of failure by preventing arsenic from escaping through the rear surface of a substrate comprising gallium arsenide. SOLUTION: In the liquid phase growing apparatus, a substrate holder 12 having a substrate housing/placing recess 16 formed therein for housing the substrate 1 comprising gallium arsenide, and a stock solution holder 13 having two or more of stock solution reservoirs in a sliding direction, are made relatively slidable opposed to each other, and the substrate 1 is brought into contact with the stock solutions 7, 8, 9 to grow a semiconductor layer comprising a compound semiconductor on the substrate 1. In the apparatus, the surface of the substrate housing/placing recess 16 undergoes mirror surface processing 16a to prevent arsenic from escaping from the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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