| 摘要 |
PURPOSE:To produce the title film with a rapidly responding property and a small dark current without being affected by the atmospheric gas, by simultaneously evaporating CdSe and Te from different sources and vacuum depositing them on the surface of an unheated substrate placed in a vacuum at below each specific depositing rate. CONSTITUTION:Vacuum vessel 1 is evacuated to about 10<-5> Torr with a vacuum pump through exhaust pipe 8. CdSe evaporation source 4 and Te evaporation source 5 are heated with heaters 6,7, respectively to attain each predetermined depositing rate, and CdSe and Te are vacuum deposited on the surface of alumina substrate 3 of ordinary temp. held by holder 2. By controlling the depositing rate of CdSe to below 10 Angstrom /see, responding characteristics are improved, and that of Te is controlled to 1 Angstrom /sec to bond Se vacant positions. The ratio of the depositing rates is pref. about 10:1. Heat treatment after the deposition is carried out in N2 gas of 650-700 deg.C for a predetermined time as usual. |
