发明名称 Cu-ALLOY WIRING MATERIAL AND Cu-ALLOY SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide an electrode-wiring material which does not cause a heat defect such as a hillock and a void even when heated to a high temperature of 350°C or higher, has low electric resistance, is inexpensive, has high reliability, and is suitable for densifying an electron device, and to provide a sputtering target. SOLUTION: The wiring material having superior heat resistance and low electric resistance is obtained by using a Cu alloy which includes one or more elements selected from rare earth elements; a Cu alloy which includes one or more elements selected from the fourth group elements in the periodic table of the elements; or a Cu alloy which includes one or more elements selected from the rare earth elements and one or more elements selected from the fourth group elements in the periodic table of the elements. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006077295(A) 申请公布日期 2006.03.23
申请号 JP20040263014 申请日期 2004.09.09
申请人 TOSOH CORP 发明人 INAO TOSHIO;TAKAYAMA SHINJI
分类号 C22C9/00;C23C14/34;H01B1/02;H01L21/28;H01L21/285;H01L21/3205;H01L23/52 主分类号 C22C9/00
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