发明名称 |
Growth of III-nitride light emitting devices on textured substrates |
摘要 |
A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substantially free of voids, and a second growth region that improves the material quality such that high quality layers can be grown over the first and second regions.
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申请公布号 |
US2006060888(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20040950000 |
申请日期 |
2004.09.23 |
申请人 |
KIM ANDREW Y;MARANOWSKI STEVEN A |
发明人 |
KIM ANDREW Y.;MARANOWSKI STEVEN A. |
分类号 |
H01L31/109;H01L33/00;H01L33/02;H01L33/08 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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