| 摘要 |
A semiconductor device according to an embodiment of the present invention comprises a first transistor including: a first source layer and a first drain layer both formed in one surface of a semiconductor substrate; a first silicide layer formed on the first source layer and the first drain layer; a first gate electrode formed on a first gate insulating film formed on the surface of the semiconductor substrate and having a second silicide layer; and a silicon nitride film formed on the sidewall of the first gate electrode; a second transistor including: a second source layer and a second drain layer both formed in the surface of the semiconductor substrate; a third silicide layer formed on the second source layer and the second drain layer and equal in thickness to the first silicide layer; a second gate electrode formed on a second gate insulating film formed on the surface of the semiconductor substrate and having a fourth silicide layer thinner in thickness than the second silicide layer.
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