| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a high cleaning effect when cleaning dissolved objects on the surface of a semiconductor wafer after development is performed by feeding a developer onto a surface of the exposed wafer. <P>SOLUTION: A liquid film is formed by discharging a cleaning liquid from a nozzle to the center of a wafer and spreading the cleaning liquid around while rotating the completely developed wafer, a dry area is then generated in the center of the wafer by moving the nozzle, and the dry area is spread around by a centrifugal force by rotating the wafer at the rotating speed of 1500rpm. The nozzle is moved away from the center of the wafer for 80-95 mm, for example, at a speed not to be caught up by the dry area, and discharging of the cleaning liquid is stopped there. Furthermore, another nozzle is disposed at this position beforehand, and while discharging the cleaning liquid therefrom, discharging may be stopped just before the dry area arrives there. When forming the core of the dry area in the center of the wafer, it is preferable that gases are blown to the center of the wafer and blowing is immediately stopped. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
