| 发明名称 |
Deposition and patterning of boron nitride nanotube ILD |
| 摘要 |
A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided ( 303 ) which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed ( 305 ) on the substrate from the suspension through an evaporative process.
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| 申请公布号 |
US2006063392(A1) |
申请公布日期 |
2006.03.23 |
| 申请号 |
US20040945319 |
申请日期 |
2004.09.20 |
| 申请人 |
FREESCALE SEMICONDUCTOR INC. |
发明人 |
VENTZEK PETER L.;JUNKER KURT;ORLOWSKI MARIUS |
| 分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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