| 摘要 |
The invention relates to an integrated semiconductor cascode circuit (46) comprising an emitter layer (12), a base area (14), a second base area (16), an intermediate area (18) and a collector area (26), wherein the first base area (14) is arranged between the emitter layer (12) and the intermediate area (18), and the second base area (16) is arranged between the intermediate area (18) and the collector area (26). The semiconductor cascode circuit (46) is characterized in that between a dielectric layer (48) provided with a central opening (50) is arranged between the first base area (14) and the second base area (16). The invention also relates to a method for the production of said semiconductor cascode circuit (46). . |
