发明名称 CLOSED LOOP CLEAN GAS METHODS AND SYSTEMS
摘要 A feedback loop cleaning system to remove deposits formed on interior surfaces of a processing chamber that includes a flow controller to set a flow rate for a cleaning gas mixture supplied to a plasma generating system, where the plasma generating system forms a plasma from the cleaning gas mixture, said plasma including a reactive cleaning species; a detector to generate a feedback signal having information about a concentration of a reaction product formed by a reaction of the reactive cleaning species with the deposits formed on the interior surfaces of the processing chamber; and a processor to convert the feedback signal into a control signal, wherein the control signal is used to adjust the flow rate of the cleaning gas mixture at the flow controller. Also, a method of removing deposits formed on interior surfaces of the processing chamber.
申请公布号 WO2006015072(A3) 申请公布日期 2006.03.23
申请号 WO2005US26695 申请日期 2005.07.27
申请人 APPLIED MATERIALS, INC.;HARVEY, KEITH, R. 发明人 HARVEY, KEITH, R.
分类号 C23C16/44 主分类号 C23C16/44
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