| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating an optical proximity effect. <P>SOLUTION: The mask includes a plurality of resolvable features to be printed on the substrate and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed. The non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
