| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical coupling power semiconductor device suitable for constituting a power semiconductor device circuit which is small, lightweight, high speed and low loss. <P>SOLUTION: The optical coupling power semiconductor device comprises a bipolar type power semiconductor device, in which a plurality of a p-type layer 34 and n-type layers 33, 35 which consist of a wide-gap semiconductor material having substantially same band gap, are laminated in at least three-layers alternately, and a light receiving element. The power semiconductor device is equipped with a control terminal 16A which controls current flowing through the intermediate layer 34 among a plurality of layers 33, 34, 35. A recombination center which generates light according to the fed current, is included in at least one layer, for example the layer 34, of a plurality of layers 33, 34, 35. The light generated in the recombination center is emitted to the outside. The light receiving element generates the output according to the fed current of the power semiconductor device, when the light is received. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
