| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of simplifying a gate control circuit and having an excellent on-property and a characteristic of reducing stationary loss. SOLUTION: A semiconductor device having pnpn diode is formed by sequentially laminating p<SP>+</SP>collector region 1, n-type buffer region 3, n<SP>-</SP>region 5, p-type base region 41, and n<SP>+</SP>cathode region 7. Trenches 9 penetrating the n<SP>+</SP>cathode region 7 from the surface of the n<SP>+</SP>cathode region 7 and reaching the n<SP>-</SP>region 5 are formed so as to have a part of running in parallel to each other. The n<SP>+</SP>cathode region 7 is formed on the whole surface between the parallel trenches 9. Gate electrode layers 13 are formed inside the trenches 9. COPYRIGHT: (C)2006,JPO&NCIPI
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