| 摘要 |
Each of a plurality of memory areas 3 provided in a magnetic memory 1 includes a TMR (tunneling magnetoresistive) element 4 having a first magnetic layer 41 of which magnetization direction A is changed by an external magnetic field; write wiring 31 for supplying the external magnetic field to the first magnetic layer 41 by means of a write current; a magnetic yoke 5 disposed so as to surround the periphery of the write wiring 31 , being formed of an approximate ring shape having a pair of end faces 5 a disposed face-to-face with a gap intervening therebetween; and a write transistor 32 for controlling conduction of the write current. The TMR element 4 is disposed so that a pair of side faces 4 a thereof is positioned face-to-face to the pair of end faces 5 a of the magnetic yoke 5.
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