Deposition of TiN films in a batch reactor

摘要

Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl₄) and ammonia (NH₃) as precursors. The TiCl₄ is flowed into the reactor in temporally separated pulses. The NH₃ can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl₄ pulses, or the NH₃ can be flowed continuously into the reactor while the TiCl₄ is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.