发明名称 |
A SONOS MEMORY DEVICE WITH OPTIMIZED SHALLOW TRENCH ISOLATION |
摘要 |
<p>Method of manufacturing a non-volatile memory device on a semiconductor substrate in a memory area, said non-volatile memory device comprising a cell stack of a first semiconductor layer, a charge trapping layer and an electrically conductive layer, the charge trapping layer being the intermediate layer between the first semiconductor layer and the electrically conductive layer, the charge trapping layer comprising at least a first insulating layer; the method comprising: - providing the substrate having the first semiconductor layer; - depositing the charge trapping layer; - depositing the electrically conductive layer; - patterning the cell stack to form at least two non-volatile memory cells, and - creating a shallow trench isolation in between said at least two non-volatile memory cells.</p> |
申请公布号 |
WO2006030380(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
WO2005IB52997 |
申请日期 |
2005.09.13 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;GOARIN, PIERRE;VAN SCHAIJK, ROBERTUS, T., F. |
发明人 |
GOARIN, PIERRE;VAN SCHAIJK, ROBERTUS, T., F. |
分类号 |
H01L27/115;H01L21/8246;H01L21/8247;H01L27/105 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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